Invention Grant
- Patent Title: Top hat structure for isolation capacitors
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Application No.: US16728224Application Date: 2019-12-27
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Publication No.: US12272633B2Publication Date: 2025-04-08
- Inventor: Thomas C. Fowler , Jerome T. Wenske , Ahsanul Islam , Dan B. Kasha
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US CA Irvine
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L21/60
- IPC: H01L21/60 ; H01L23/00 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L29/06 ; H01L49/02

Abstract:
An isolation capacitor structure reduces the likelihood of breakdown in the passivation layers by physically re-shaping or dividing the top plate of the isolation capacitor into two segments. In that way, the electric field is driven down and away from the passivation surfaces. One embodiment utilizes a series capacitor formed by the top metal plate of the capacitor and an additional “top hat” plate above the top metal plate that redirects the fields into the main isolation capacitor. Vias may be included between the top hat plate and the top metal plate. Another approach reshapes the top plate to have an integrated top hat structure and achieves similar results of directing charge down and away from the passivation layer surface breakdown paths.
Public/Granted literature
- US20210202375A1 Top Hat Structure for Isolation Capacitors Public/Granted day:2021-07-01
Information query
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