Invention Grant
- Patent Title: Method and apparatus for DV/DT controlled ramp-on in multi-semiconductor solid-state power controllers
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Application No.: US17897339Application Date: 2022-08-29
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Publication No.: US12272945B2Publication Date: 2025-04-08
- Inventor: Peter James Handy , Ian David Johnson , Nicholas George Tembe
- Applicant: GE AVIATION SYSTEMS LIMITED
- Applicant Address: GB Gloucestershire
- Assignee: GE AVIATION SYSTEMS LIMITED
- Current Assignee: GE AVIATION SYSTEMS LIMITED
- Current Assignee Address: GB Gloucestershire
- Agency: Fitch, Even, Tabin & Flannery LLP
- Priority: EP21208643 20211116
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H02H9/00 ; H03K17/0812

Abstract:
Multi-semiconductor SSPCs that solve bus level problems affecting systems as well as controller level problems affecting individual multi-semiconductor SSPCs are disclosed. Bus level and controller level problems adversely affect multi-semiconductor SSPCs and their associated systems. The disclosed multi-semiconductor SSPCs solve both bus level and controller level problems by implementing controlled rate-change of voltage (dv/dt) ramp-on rate, to ensure that the voltage on the input bus does not collapse when a multi-semiconductor SSPC is commanded closed and that a minimum amount of power is being dissipated evenly across the switching semiconductors.
Public/Granted literature
- US20230155373A1 METHOD AND APPARATUS FOR DV/DT CONTROLLED RAMP-ON IN MULTI-SEMICONDUCTOR SOLID-STATE POWER CONTROLLERS Public/Granted day:2023-05-18
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