Invention Grant
- Patent Title: Drive circuit of bridge arm switching transistor, drive circuit, and power converter
-
Application No.: US17856674Application Date: 2022-07-01
-
Publication No.: US12273103B2Publication Date: 2025-04-08
- Inventor: Xingqiang Peng , Shaoqing Dong , Jing Wen
- Applicant: HUAWEI TECHNOLOGIES CO., LTD.
- Applicant Address: CN Guangdong
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Guangdong
- Agency: WOMBLE BOND DICKINSON (US) LLP
- Priority: CN202110753639.7 20210702
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H02M7/5387 ; H03K17/06

Abstract:
This application discloses a drive circuit of a bridge arm switching transistor, a drive circuit, and a power converter. The bridge arm switching transistor includes a first switching transistor and a second switching transistor. A first terminal of the first switching transistor is connected to a power supply, a second terminal of the first switching transistor is connected to a first terminal of the second switching transistor, and a second terminal of the second switching transistor is grounded. The drive circuit includes a low-voltage region and at least two high-voltage regions isolated which include a first high-voltage region and a second high-voltage region. A semiconductor device configured to drive the second switching transistor is disposed in the low-voltage region. P-type semiconductor devices are disposed in each of the first high-voltage region and the second high-voltage region, and the P-type semiconductor devices are configured to drive the first switching transistor.
Public/Granted literature
- US20230006668A1 DRIVE CIRCUIT OF BRIDGE ARM SWITCHING TRANSISTOR, DRIVE CIRCUIT, AND POWER CONVERTER Public/Granted day:2023-01-05
Information query
IPC分类: