Invention Grant
- Patent Title: Memory device
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Application No.: US17699212Application Date: 2022-03-21
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Publication No.: US12274058B2Publication Date: 2025-04-08
- Inventor: Shih-Hung Chen , Chun-Hsiung Hung
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H10B41/35
- IPC: H10B41/35 ; G11C16/04 ; H01L23/522 ; H01L23/528 ; H10B12/00 ; H10B41/20 ; H10B43/20 ; H10B43/35

Abstract:
A memory device for artificial intelligence calculation includes a memory structure, a controller chip, and a processer chip. The memory structure includes a first memory chip, and a stack of second memory chips, in which a memory density of each of the second memory chips is greater than a memory density of the first memory chip. The controller chip is electrically connected to the first memory chip and the second memory chips. The processer chip is electrically connected to the controller chip.
Public/Granted literature
- US20230301084A1 MEMORY DEVICE Public/Granted day:2023-09-21
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