A set of stacked transistors, system, and method to connect the gates of stacked field-effect transistors through sidewall straps. The set of stacked transistors may include a first transistor including a first gate. The set of stacked transistors may also include a second transistor including a second gate, where the second transistor is above the first transistor. The set of stacked transistors may also include a dielectric preventing direct contact between the first gate and the second gate. The set of stacked transistors may also include a first sidewall strap proximately connected to the first gate and the second gate, where the first sidewall strap connects the first transistor and the second transistor.