Invention Grant
- Patent Title: Phase change memory cell having pillar bottom electrode with improved thermal insulation
-
Application No.: US17505067Application Date: 2021-10-19
-
Publication No.: US12274185B2Publication Date: 2025-04-08
- Inventor: Juntao Li , Ruilong Xie , Kangguo Cheng , Carl Radens
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt & Kammer PLLC
- Agent Yuanmin Cai
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H10B63/00 ; H10N70/00 ; H10N70/20
Abstract:
A phase-change memory device includes a bottom electrode; a stack of alternating electrical conductor layers directly contacting a top surface of the bottom electrode; a metal pillar directly contacting a top surface of the stack; a phase change material element directly contacting a top surface of the metal pillar; and a top electrode on the phase change material element, wherein a lateral dimension of the metal pillar is smaller than that of the stack.
Public/Granted literature
- US20230122498A1 PHASE CHANGE MEMORY CELL HAVING PILLAR BOTTOM ELECTRODE WITH IMPROVED THERMAL INSULATION Public/Granted day:2023-04-20
Information query
