Invention Grant
- Patent Title: Memory device and operation thereof
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Application No.: US18595909Application Date: 2024-03-05
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Publication No.: US12277974B2Publication Date: 2025-04-15
- Inventor: Xiaojiang Guo
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; G11C16/26 ; G11C16/30 ; G11C16/32 ; H10B43/27

Abstract:
A circuit includes a voltage generator and a sensing device. The voltage generator includes a first output and a second output. The first output is configured to output a word line voltage, and the second output is configured to output a flag signal indicates a relationship between the word line voltage and a reference signal. The sensing device includes a first input and a third output. The first input is coupled to the second output of the voltage generator, and the third output of the sensing device is configured to output a value corresponding to capacitance change of word line capacitance loading based on the flag signal.
Public/Granted literature
- US20240212759A1 MEMORY DEVICE AND OPERATION THEREOF Public/Granted day:2024-06-27
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