Invention Grant
- Patent Title: Semiconductor structure having fuse below gate structure and method of manufacturing thereof
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Application No.: US18209101Application Date: 2023-06-13
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Publication No.: US12278179B2Publication Date: 2025-04-15
- Inventor: Wei-Zhong Li , Hsih-Yang Chiu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agent Xuan Zhang
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L23/528 ; H10D30/01 ; H10D30/60 ; H10D62/13 ; H10D64/01 ; H10D64/23 ; H10D64/27 ; H10D84/01 ; H10D84/03 ; H10D84/40 ; H10D84/83
Abstract:
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate; a transistor disposed over the substrate; and a trench fuse disposed in the substrate and penetrating a source/drain (S/D) region of the transistor. A method for manufacturing the semiconductor structure is also provided.
Public/Granted literature
- US20240063116A1 SEMICONDUCTOR STRUCTURE HAVING FUSE BELOW GATE STRUCTURE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2024-02-22
Information query
IPC分类:
