Invention Grant
- Patent Title: Semiconductor device with isolation structure
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Application No.: US18425797Application Date: 2024-01-29
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Publication No.: US12278235B2Publication Date: 2025-04-15
- Inventor: Shi-Ning Ju , Kuo-Cheng Chiang , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/762 ; H01L21/8234 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/786
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures and a gate stack wrapped around the semiconductor nanostructures. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching one or more of the semiconductor nanostructures. The semiconductor device structure further includes an isolation structure continuously extending across edges of the semiconductor nanostructures.
Public/Granted literature
- US20240194674A1 SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE Public/Granted day:2024-06-13
Information query
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