Disclosed are a non-volatile memory including a negative capacitance blocking oxide layer, an operating method of the same, and a manufacturing method of the same. The non-volatile memory may include a tunneling oxide layer formed on a channel; a charge storage layer formed on one surface of the tunneling oxide layer; a negative capacitance blocking oxide layer in which a dielectric layer and an imprinted polarization layer are sequentially configured on one surface of the charge storage layer; and a gate formed on one surface of the negative capacitance blocking oxide layer.