According to one embodiment, a memory device includes: a first memory cell; a second memory cell; a first circuit configured to supply a write current to the first memory cell and the second memory cell; a first wiring coupled to the first circuit; a first electrode configured to electrically couple the first memory cell to the first wiring; and a second electrode configured to electrically couple the second memory cell to the first wiring. A length of the first wiring from the first circuit to the first electrode is smaller than a length of the first wiring from the first circuit to the second electrode. A resistance value of the first electrode is higher than a second resistance value of the second electrode.