Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming fins from a substrate, forming a gate stack over portions of the fins, forming an epitaxial source/drain region adjacent the gate stack, depositing a dielectric layer over the epitaxial source/drain region, forming an opening in the dielectric layer, and forming a gapfill in the opening in a bottom-up fashion. The gapfill includes Si or W. The method further includes forming a conductive feature over the epitaxial source/drain region and replacing the gapfill with a dielectric material.