A semiconductor device includes a semiconductor material layer forming a channel layer, a pair of source/drain electrodes formed on the semiconductor material layer, and a gate electrode arranged between the pair of source/drain electrodes and formed on the semiconductor material layer via a gate insulating film. The semiconductor device further includes a connection path using a capacitor in which an insulating film formed in the same layer as the gate insulating film is sandwiched by a pair of electrodes. The capacitor undergoes dielectric breakdown at a voltage lower than a dielectric breakdown voltage of the gate insulating film is formed between at least one of the pair of source/drain electrodes and the gate electrode.