Invention Grant
- Patent Title: Baw resonators with antisymmetric thick electrodes
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Application No.: US18339939Application Date: 2023-06-22
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Publication No.: US12283941B2Publication Date: 2025-04-22
- Inventor: Dae Ho Kim , Mary Winters , Zhiqiang Bi
- Applicant: Akoustis, Inc.
- Applicant Address: US NC Huntersville
- Assignee: Akoustis, Inc.
- Current Assignee: Akoustis, Inc.
- Current Assignee Address: US NC Huntersville
- Main IPC: H03H9/13
- IPC: H03H9/13 ; H03H9/02 ; H03H9/17 ; H03H9/54

Abstract:
A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.
Public/Granted literature
- US20230336151A1 BAW RESONATORS WITH ANTISYMMETRIC THICK ELECTRODES Public/Granted day:2023-10-19
Information query
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