Invention Grant
- Patent Title: Drive circuit for semiconductor switching device
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Application No.: US18274724Application Date: 2021-02-17
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Publication No.: US12283945B2Publication Date: 2025-04-22
- Inventor: Takuya Sakai , Kohei Onda
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- International Application: PCT/JP2021/005826 WO 20210217
- International Announcement: WO2022/176040 WO 20220825
- Main IPC: H03K17/082
- IPC: H03K17/082 ; H03K17/16 ; H03K17/08

Abstract:
A detection circuit is provided to output a feedback signal and a adjustment current when a voltage of a high-voltage side main terminal of a semiconductor switching device is equal to or higher than a preset threshold value in a period in which a gate drive circuit turns off the semiconductor switching device to cut off a current, a control circuit diagnoses a state of the semiconductor switching device or controls a signal to be outputted to the gate drive circuit, on the basis of the feedback signal, and a gate current, which is an output of the gate drive circuit, is adjusted by the adjustment current.
Public/Granted literature
- US20240128966A1 DRIVE CIRCUIT FOR SEMICONDUCTOR SWITCHING DEVICE Public/Granted day:2024-04-18
Information query
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