Invention Grant
- Patent Title: Diamond semiconductor system and method
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Application No.: US18498756Application Date: 2023-10-31
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Publication No.: US12288690B2Publication Date: 2025-04-29
- Inventor: Adam Khan
- Applicant: AKHAN Semiconductor, Inc.
- Applicant Address: US IL Gurnee
- Assignee: AKHAN Semiconductor, Inc.
- Current Assignee: AKHAN Semiconductor, Inc.
- Current Assignee Address: US IL Gurnee
- Agency: Stevens Law Group
- Agent David R. Stevens
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L21/02 ; H01L21/3065 ; H01L29/06 ; H01L29/16 ; H01L29/66 ; H01L29/78 ; H01L29/868 ; H01L31/028 ; H01L33/34 ; H01L29/778 ; H01L33/00
Abstract:
Disclosed herein is a new and improved system and method for fabricating diamond films by first seeding a surface of a transparent substrate. A diamond layer that is at least one of nanocrystalline and ultrananocrystalline can be deposited upon the surface of the transparent substrate and both the diamond layer and the transparent substrate modified to incorporate substitutional atoms.
Public/Granted literature
- US20240063021A1 Diamond Semiconductor System And Method Public/Granted day:2024-02-22
Information query
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