Invention Grant
- Patent Title: Semiconductor device structure with silicide portion between conductive plugs
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Application No.: US17522324Application Date: 2021-11-09
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Publication No.: US12288748B2Publication Date: 2025-04-29
- Inventor: Chun-Cheng Liao
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: MUNCY, GEISSLER, OLDS & LOWE, P.C.
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H10B12/00

Abstract:
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first conductive plug disposed in the first dielectric layer, and a second conductive plug disposed in the second dielectric layer and directly over the first conductive plug. The semiconductor device structure further includes a silicide portion disposed between the first conductive plug and the second conductive plug.
Public/Granted literature
- US20230146713A1 SEMICONDUCTOR DEVICE STRUCTURE WITH SILICIDE PORTION BETWEEN CONDUCTIVE PLUGS Public/Granted day:2023-05-11
Information query
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