Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US18469799Application Date: 2023-09-19
-
Publication No.: US12288806B2Publication Date: 2025-04-29
- Inventor: Kodai Ozawa , Sho Nakanishi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rimon P.C.
- Priority: JP2020-184270 20201104
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/739 ; H01L29/861
Abstract:
The semiconductor device has the main surface, the semiconductor substrate having the first impurity region formed on the main surface, the first electrode formed on the main surface having the first impurity region, the insulating film formed on the main surface such that surround the first electrode, the second electrode formed on the insulating film such that spaced apart from the first electrode and annularly surround the first electrode, and the semi-insulating film. The first electrode has the outer peripheral edge portion. The semi-insulating film is continuously formed from on the outer peripheral edge portion to on the second electrode. The outer peripheral edge portion includes the first corner portion. The second electrode has the second corner portion facing the first corner portion. The semi-insulating film on the insulating film is removed between the first corner and the second corner portion.
Public/Granted literature
- US20240006487A1 SEMICONDUCTOR DEVICE Public/Granted day:2024-01-04
Information query
IPC分类:
