Invention Grant
- Patent Title: Magnetic memory device and method for forming the same
-
Application No.: US17676213Application Date: 2022-02-20
-
Publication No.: US12289897B2Publication Date: 2025-04-29
- Inventor: Hui-Lin Wang , Jing-Yin Jhang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202210042078.4 20220114
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L27/22 ; H01L43/02 ; H10B61/00 ; H10N50/01 ; H10N50/80 ; H10N50/85
Abstract:
A magnetic memory device includes a bottom electrode layer, a magnetic tunneling junction (MTJ) stack disposed on the bottom electrode layer, a dielectric cap layer disposed on the MTJ stack, and a metal cap layer disposed on the dielectric cap layer, wherein the metal cap layer comprises a plurality of first metal layers and second metal layers alternately stacked on the dielectric cap layer.
Public/Granted literature
- US20230232637A1 MAGNETIC MEMORY DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2023-07-20
Information query
IPC分类:
