Invention Grant
- Patent Title: Semiconductor device with integrated magnetic flux concentrator, and method for producing same
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Application No.: US18461923Application Date: 2023-09-06
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Publication No.: US12290006B2Publication Date: 2025-04-29
- Inventor: Appo Van Der Wiel , Yves Bidaux , Lionel Tombez
- Applicant: Melexis Technologies SA
- Applicant Address: BE Bevaix
- Assignee: Melexis Technologies SA
- Current Assignee: Melexis Technologies SA
- Current Assignee Address: BE Bevaix
- Agency: Workman Nydegger
- Priority: EP20209345 20201123
- Main IPC: G01R33/07
- IPC: G01R33/07 ; H10N50/80 ; H10N52/00

Abstract:
A method of producing a semiconductor substrate comprising at least one integrated magnetic flux concentrator, comprising the steps of: a) providing a semiconductor substrate having an upper surface; b) making at least one cavity in said upper surface; c) depositing one or more layers of one or more materials, including sputtering at least one layer of a soft magnetic material; d) removing substantially all of the soft magnetic material that is situated outside of the at least one cavity, while leaving at least a portion of the soft magnetic material that is inside said at least one cavity. A semiconductor substrate comprising at least one integrated magnetic flux concentrator. A sensor device or a sensor system, a current sensor device or system, a position sensor device or system, a proximity sensor device or system, an integrated transformer device or system.
Public/Granted literature
- US20230422632A1 SEMICONDUCTOR DEVICE WITH INTEGRATED MAGNETIC FLUX CONCENTRATOR, AND METHOD FOR PRODUCING SAME Public/Granted day:2023-12-28
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