Invention Grant
- Patent Title: Methods and systems for heating a wide bandgap substrate
-
Application No.: US18175363Application Date: 2023-02-27
-
Publication No.: US12291773B2Publication Date: 2025-05-06
- Inventor: Petar Atanackovic
- Applicant: Silanna UV Technologies Pte Ltd
- Applicant Address: SG Singapore
- Assignee: Silanna UV Technologies Pte Ltd
- Current Assignee: Silanna UV Technologies Pte Ltd
- Current Assignee Address: SG Singapore
- Agency: MLO, a professional corp.
- Main IPC: C23C14/54
- IPC: C23C14/54 ; C23C14/08 ; C23C14/50 ; C30B23/02 ; C30B23/06 ; C30B29/16 ; G01J5/00 ; G01J5/0802 ; G05D23/19 ; H01J37/32 ; H05B1/02 ; H05B3/14

Abstract:
Methods and systems of heating a substrate in a vacuum deposition process include a resistive heater having a resistive heating element. Radiative heat emitted from the resistive heating element has a wavelength in a mid-infrared band from 5 μm to 40 μm that corresponds to a phonon absorption band of the substrate. The substrate comprises a wide bandgap semiconducting material and has an uncoated surface and a deposition surface opposite the uncoated surface. The resistive heater and the substrate are positioned in a vacuum deposition chamber. The uncoated surface of the substrate is spaced apart from and faces the resistive heater. The uncoated surface of the substrate is directly heated by absorbing the radiative heat.
Public/Granted literature
- US20230203643A1 METHODS AND SYSTEMS FOR HEATING A WIDE BANDGAP SUBSTRATE Public/Granted day:2023-06-29
Information query
IPC分类: