Invention Grant
- Patent Title: Method for reading memory, a memory, a memory system, and electronic device
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Application No.: US18089512Application Date: 2022-12-27
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Publication No.: US12293786B2Publication Date: 2025-05-06
- Inventor: Zhuqin Duan , Xiaojiang Guo
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Priority: CN202211585949.3 20221209
- Main IPC: G11C11/408
- IPC: G11C11/408 ; G11C11/4096

Abstract:
A method includes applying a first read voltage to a word line corresponding to a first word line address in a first read request instruction. The method also includes detecting an obtained second read request instruction. The method further includes when the second word line address included in the second read request instruction is the same as the first word line address, applying a second read voltage to the word line corresponding to the first word line address after the end of the application of the first read voltage.
Public/Granted literature
- US20240194248A1 METHOD FOR READING MEMORY, A MEMORY, A MEMORY SYSTEM, AND ELECTRONIC DEVICE Public/Granted day:2024-06-13
Information query
IPC分类: