Invention Grant
- Patent Title: Manufacturing method of forming a semiconductor memory device with improved structural stability and process defects
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Application No.: US17856741Application Date: 2022-07-01
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Publication No.: US12293805B2Publication Date: 2025-05-06
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: WILLIAM PARK & ASSOCIATES LTD.
- Priority: KR10-2019-0161844 20191206
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C5/06 ; H01L23/522 ; H10B41/27 ; H10B43/27

Abstract:
Provided herein is a semiconductor memory device and a manufacturing method of the semiconductor memory device. The semiconductor memory device includes a contact pattern including a vertical contact part, and a sidewall contact part extending from the vertical contact part in a direction crossing the vertical contact part, a lower conductive pattern having a hole into which the vertical contact part is inserted, and an upper conductive pattern overlapping a portion of the lower conductive pattern. The upper conductive pattern includes a first side portion in contact with the sidewall contact part, and a second side portion facing the vertical contact part and spaced apart from the vertical contact part.
Public/Granted literature
- US20220335980A1 SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2022-10-20
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