Invention Grant
- Patent Title: System and method for removing impurities during chemical mechanical planarization
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Application No.: US17355981Application Date: 2021-06-23
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Publication No.: US12293917B2Publication Date: 2025-05-06
- Inventor: Te-Chien Hou , Po-Chin Nien , Chih Hung Chen , Ying-Tsung Chen , Kei-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group
- Main IPC: H01L21/321
- IPC: H01L21/321 ; B24B37/34 ; B24B53/017 ; H01L21/306

Abstract:
A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.
Public/Granted literature
- US20220415665A1 SYSTEM AND METHOD FOR REMOVING IMPURITIES DURING CHEMICAL MECHANICAL PLANARIZATION Public/Granted day:2022-12-29
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