Invention Grant
- Patent Title: Light-emitting device having light-emitting units including epitaxial structure and conductive structure
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Application No.: US18665858Application Date: 2024-05-16
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Publication No.: US12294045B2Publication Date: 2025-05-06
- Inventor: Shaohua Huang , Xiaoqiang Zeng , Jianfeng Yang , Canyuan Zhang
- Applicant: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Applicant Address: CN Nanan
- Assignee: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Nanan
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L25/075 ; H01L25/16 ; H01L33/64

Abstract:
A light-emitting device includes a lead frame having a first surface on which a patterned conductive layer is provided, and a light-emitting element. The light-emitting element includes an insulating substrate formed on the first surface, a plurality of light-emitting units formed on the insulating substrate, at least one first electrode, at least one second electrode and at least a pair of bonding wires. The first and second electrodes are respectively placed in electrical connection with a first one and a second one of the light-emitting units, and are disposed outward of the light-emitting units. Each of the pair of bonding wires is disposed to electrically connect a respective one of the first and second electrodes to the patterned conductive layer.
Public/Granted literature
- US20240304776A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2024-09-12
Information query
IPC分类: