Invention Grant
- Patent Title: Semiconductor integrated circuit device
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Application No.: US17543587Application Date: 2021-12-06
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Publication No.: US12294355B2Publication Date: 2025-05-06
- Inventor: Yoichi Takano
- Applicant: Yoichi Takano
- Applicant Address: JP Hadano
- Assignee: Yoichi Takano
- Current Assignee: Yoichi Takano
- Current Assignee Address: JP Hadano
- Agency: Shih IP Law Group, PLLC.
- Priority: JP2020-201399 20201204
- Main IPC: H02H3/087
- IPC: H02H3/087 ; G05F1/573 ; H03K17/082

Abstract:
A semiconductor integrate circuit device includes: an output transistor connected between a voltage input terminal to which a DC voltage is input and a voltage output terminal; a control circuit that controls on/off of the output transistor; a proportional current generation circuit capable of generating a current proportionally smaller than a current flowing through the output transistor; an overcurrent detection circuit capable of detecting an overcurrent state of an output current by determining whether a current flowing through the output transistor is equal to or greater than a first predetermined current value, based on the current generated by the proportional current generation circuit; and a retry circuit that generates and outputs a signal for intermittently turning off the output transistor in response to the overcurrent detection circuit detecting the overcurrent state.
Public/Granted literature
- US20220182049A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2022-06-09
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