Invention Grant
- Patent Title: Integrated circuit semiconductor device
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Application No.: US17844623Application Date: 2022-06-20
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Publication No.: US12295136B2Publication Date: 2025-05-06
- Inventor: Intak Jeon , Hyukwoo Kwon , Hanjin Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2021-0140490 20211020
- Main IPC: H10B12/00
- IPC: H10B12/00 ; H01L49/02

Abstract:
An integrated circuit semiconductor device includes a lower electrode formed on a substrate extending in a first direction and a second direction perpendicular to the first direction and a support structure supporting the lower electrode. The support structure includes a support pattern surrounding the lower electrode, extending in the first direction and the second direction, and having a hole through which the lower electrode passes, and a concavo-convex structure having at a surface of the support pattern a plurality of convex portions extending in a third direction perpendicular to the first direction and the second direction, and a plurality of concave portions arranged between the convex portions.
Public/Granted literature
- US20230117391A1 INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE Public/Granted day:2023-04-20
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