Invention Grant
- Patent Title: Method of writing data in storage device using write throttling and storage device performing the same
-
Application No.: US18132092Application Date: 2023-04-07
-
Publication No.: US12299316B2Publication Date: 2025-05-13
- Inventor: Jinwook Lee , Dongouk Moon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2022-0069419 20220608
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F3/06

Abstract:
A method of writing data in a storage device is provided. The method includes: receiving write data from a host device; monitoring an operating temperature of the storage device; generating a plurality of write data blocks respectively corresponding to a plurality of storage regions of the storage device based on the write data; and based on the operating temperature, performing a write throttling operation including performing a write operation on P write data blocks among the plurality of write data blocks by transmitting a write command to P storage regions among the plurality of storage regions and skipping the write operation on X write data blocks among the plurality of write data blocks by skipping an operation of transmitting the write command to X storage regions among the plurality of storage regions. P and X are natural numbers.
Public/Granted literature
- US20230401002A1 METHOD OF WRITING DATA IN STORAGE DEVICE USING WRITE THROTTLING AND STORAGE DEVICE PERFORMING THE SAME Public/Granted day:2023-12-14
Information query