Invention Grant
- Patent Title: Structure and formation method of semiconductor device with carbon-containing conductive structure
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Application No.: US17578102Application Date: 2022-01-18
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Publication No.: US12300541B2Publication Date: 2025-05-13
- Inventor: Wei-Hao Liao , Hsi-Wen Tien , Yu-Teng Dai , Chih-Wei Lu , Hsin-Chieh Yao , Hwei-Jay Chu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/285 ; H01L21/311
Abstract:
A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a conductive line over the substrate. The semiconductor device structure also includes a catalyst structure over the conductive line and a carbon-containing conductive via directly on the catalyst structure. The semiconductor device structure further includes a dielectric layer surrounding the carbon-containing conductive via.
Public/Granted literature
- US20230230881A1 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH CARBON-CONTAINING CONDUCTIVE STRUCTURE Public/Granted day:2023-07-20
Information query
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