Invention Grant
- Patent Title: Semiconductor package and method of fabricating the same
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Application No.: US18161814Application Date: 2023-01-30
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Publication No.: US12300563B2Publication Date: 2025-05-13
- Inventor: Hao-Yi Tsai , Tzuan-Horng Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L21/78 ; H01L23/31 ; H01L23/34 ; H01L25/00 ; H01L21/768 ; H01L23/00

Abstract:
A semiconductor package provided herein includes a first semiconductor die, a second semiconductor die and an insulating encapsulation. The second semiconductor die is stacked on the first semiconductor die. The insulating encapsulation laterally surrounds the first semiconductor die and the second semiconductor die in a one-piece form, and has a first sidewall and a second sidewall respectively adjacent to the first semiconductor die and the second semiconductor die. The first sidewall keeps a lateral distance from the second sidewall.
Public/Granted literature
- US20230170272A1 SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME Public/Granted day:2023-06-01
Information query
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