Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17901632Application Date: 2022-09-01
-
Publication No.: US12302593B2Publication Date: 2025-05-13
- Inventor: Daiki Yoshikawa
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2022-045016 20220322
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/06 ; H01L29/423 ; H10D12/00 ; H10D62/10 ; H10D64/27
Abstract:
A semiconductor device includes first to third electrodes, first to fifth semiconductor regions, and a first contact region. The third semiconductor region is located on the second semiconductor region. The fourth semiconductor region is located on a portion of the third semiconductor region. The third electrode extends in a second direction and faces the third semiconductor region via a first insulating film in a third direction. The first contact region is located on a portion of the third semiconductor region and is arranged with the third electrode in the third direction. The fifth semiconductor region includes a first portion and a second portion. The first portion is arranged in the third direction with a boundary portion between the first insulating film and the third semiconductor region between the second semiconductor region and the fourth semiconductor region. The second portion is arranged in the second direction with the boundary portion.
Public/Granted literature
- US20230307530A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-09-28
Information query
IPC分类:
