Invention Grant
- Patent Title: Semiconductor devices with crystallized channel regions and methods of manufacturing thereof
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Application No.: US17671341Application Date: 2022-02-14
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Publication No.: US12302606B2Publication Date: 2025-05-13
- Inventor: Mark I. Gardner , H. Jim Fulford
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Main IPC: H10D30/67
- IPC: H10D30/67 ; H10D30/01 ; H10D84/85

Abstract:
Example implementations can include a semiconductor device with a first seed layer including a first material and having a planar structure, the first material having a two-dimensional structure, a first device layer including a second material and disposed over a first surface of the first seed layer, the second material having a crystallized structure, and a second device layer including the second material and disposed over a second surface of the first seed layer opposite to the first surface of the first seed layer.
Public/Granted literature
- US20230261075A1 SEMICONDUCTOR DEVICES WITH CRYSTALLIZED CHANNEL REGIONS AND METHODS OF MANUFACTURING THEREOF Public/Granted day:2023-08-17
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