Semiconductor devices with crystallized channel regions and methods of manufacturing thereof
Abstract:
Example implementations can include a semiconductor device with a first seed layer including a first material and having a planar structure, the first material having a two-dimensional structure, a first device layer including a second material and disposed over a first surface of the first seed layer, the second material having a crystallized structure, and a second device layer including the second material and disposed over a second surface of the first seed layer opposite to the first surface of the first seed layer.
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