An embodiment relates to a device comprising SiC, the device having a p-shield region that is outside a junction gate field-effect transistor region, wherein a doping concentration in a p-well region within a MOSFET channel is non-uniform. Another embodiment relates to a device comprising SiC, the device having a p-shield region, wherein a doping concentration in a p-well region within a MOSFET channel is non-uniform, wherein at least a portion of the p-shield region is located within the p-well region.