Invention Grant
- Patent Title: Structure of the photodiode
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Application No.: US17892735Application Date: 2022-08-22
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Publication No.: US12302682B2Publication Date: 2025-05-13
- Inventor: Yi-Ming Chang , Kuen-Wei Tsai
- Applicant: RAYNERGY TEK INCORPORATION
- Applicant Address: TW Hsinchu
- Assignee: RAYNERGY TEK INCORPORATION
- Current Assignee: RAYNERGY TEK INCORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Main IPC: H10K30/82
- IPC: H10K30/82

Abstract:
The present invention relates to a structure of photodiode, which comprises a substrate, a first electrode, an electron transport layer, a photoactive layer, a filter layer, and a second electrode. The first electrode is disposed on the substrate. The electron transport layer is disposed on the first electrode. The photoactive layer is disposed on the electron transport layer. The photoactive layer has a first energy gap value. The filter layer is disposed on the photoactive layer and has a second energy gap value. The second electrode is disposed on the filter layer. The second energy gap value is greater than the first energy gap value. The ratio of the second energy gap value to the first energy gap value is an energy gap ratio. The energy gap ratio is greater than 1 and less than or equal to 3.
Public/Granted literature
- US20230057435A1 STRUCTURE OF THE PHOTODIODE Public/Granted day:2023-02-23
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