Invention Grant
- Patent Title: Memory device and program operation thereof
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Application No.: US18404690Application Date: 2024-01-04
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Publication No.: US12315568B2Publication Date: 2025-05-27
- Inventor: Huangpeng Zhang , Zhichao Du , Ke Jiang , Cong Luo , Daesik Song
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G06F3/06 ; G11C16/04 ; G11C16/08 ; G11C16/10 ; G11C11/56 ; H10B43/27

Abstract:
In certain aspects, a memory device includes memory cells, word lines coupled to the memory cells, and a peripheral circuit coupled to the memory cells. The peripheral circuit is coupled to the word lines and configured to apply program pulses to a selected word line of the word lines in a program operation, obtain a number of occurrences of suspensions during the program operation, and determine a limit on a number of program pulses for the program operation based on the number of occurrences of the suspensions during the program operation.
Public/Granted literature
- US20240145007A1 MEMORY DEVICE AND PROGRAM OPERATION THEREOF Public/Granted day:2024-05-02
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