A light emitting apparatus includes a laminated structure provided at a substrate and including a plurality of columnar sections. The plurality of columnar sections each includes a light emitting layer including a plurality of first well layers, a first semiconductor layer provided between the substrate and the light emitting layer and containing Ga and N, an optical confining layer provided between the first semiconductor layer and the light emitting layer and confining light in the light emitting layer, and a second well layer provided between the first semiconductor layer and the optical confining layer. The first well layers and the second well layer are made of InGaN. The optical confining layer includes an InGaN layer. The composition formula of the first well layers is InxGa1-xN. The composition formula of the InGaN layer of the optical confining layer is InyGa1-yN. The composition formula of the second well layer is InzGa1-zN. The parameters x, y, and z satisfy 0