Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18752356Application Date: 2024-06-24
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Publication No.: US12316309B2Publication Date: 2025-05-27
- Inventor: Yuji Ishimatsu
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: HSML P.C.
- Priority: JP2018-106986 20180604
- Main IPC: H02M7/48
- IPC: H02M7/48 ; H01L25/07 ; H03K17/16 ; H01L23/498

Abstract:
A semiconductor device includes an inverter circuit having a first switching element and a second switching element, a first control circuit, a second control circuit, and a limiting unit. The first switching element is supplied with a power supply voltage. The second switching element includes a first terminal connected to the first switching element, a second terminal connected to ground, and a control terminal. The first control circuit controls the first switching element. The second control circuit controls the second switching element. The limiting unit reduces fluctuation in voltage between the second terminal and the control terminal based on voltage fluctuation at the second terminal of the second switching element.
Public/Granted literature
- US20240348247A1 SEMICONDUCTOR DEVICE Public/Granted day:2024-10-17
Information query
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