Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the semiconductor device
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Application No.: US18501854Application Date: 2023-11-03
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Publication No.: US12317486B2Publication Date: 2025-05-27
- Inventor: Nam Jae Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si Gyeonggi-do
- Agency: WILLIAM PARK & ASSOCIATES LTD.
- Priority: KR10-2020-0121645 20200921
- Main IPC: H10B41/35
- IPC: H10B41/35 ; H01L23/522 ; H10B41/27 ; H10B43/27 ; H10B43/35 ; H10B63/00

Abstract:
A semiconductor device and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a stacked structure including a plurality of conductive patterns and a plurality of insulating patterns alternately stacked on each other, a cell plug passing through the stacked structure, a select plug coupled to the cell plug, and a select pattern surrounding the select plug, wherein the select pattern includes a first conductive portion and a second conductive portion covering a sidewall and a top surface of the first conductive portion, and wherein the conductive patterns, the first conductive portion, and the second conductive portion include different materials.
Public/Granted literature
- US20240064975A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE Public/Granted day:2024-02-22
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