Invention Grant
- Patent Title: Light emitting device using micrometer-sized semiconductor light emitting diode, and method for manufacturing same
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Application No.: US17616845Application Date: 2019-06-20
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Publication No.: US12317647B2Publication Date: 2025-05-27
- Inventor: Eunah Lee
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2019-0070015 20190613
- International Application: PCT/KR2019/007430 WO 20190620
- International Announcement: WO2020/251106 WO 20201217
- Main IPC: H10H20/83
- IPC: H10H20/83 ; H10H20/01 ; H10H20/814 ; H10H20/831 ; H10H20/857

Abstract:
A light-emitting device using a micrometer-sized semiconductor light-emitting element can include a substrate including a plurality of individual device areas; a semiconductor structure located in each of the plurality of individual device areas, in which the semiconductor structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer of the semiconductor structure; a second electrode electrically connected to the second conductive semiconductor layer of the semiconductor structure; and a light extraction structure located in a gap area located outside of the device area on the substrate.
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