Invention Grant
- Patent Title: Refresh circuit and memory
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Application No.: US18331923Application Date: 2023-06-08
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Publication No.: US12322430B2Publication Date: 2025-06-03
- Inventor: Xianlei Cao , Xian Fan
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202210044510.3 20220114
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C11/406 ; G11C11/408

Abstract:
A preprocessing module receives a word line activation command and a clock signal and outputs a word line address corresponding to a current word line activation command as a word line address signal when a count value reaches a preset value. An address processing module counts all received word line address signals and outputs a word line address signal with the largest number of occurrences as a row hammer address. A first processing unit generates first and second supplementary refresh address according to the row hammer address. A second processing unit generates a normal refresh address according to a refresh command. A refresh unit performs a refresh operation according to an acquired address signal. A control unit selects to output a refresh address or control the refresh unit to select to receive a refresh address.
Public/Granted literature
- US20230317133A1 REFRESH CIRCUIT AND MEMORY Public/Granted day:2023-10-05
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