Invention Grant
- Patent Title: Sense amplifier with read circuit for compute-in-memory
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Application No.: US17692996Application Date: 2022-03-11
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Publication No.: US12322435B2Publication Date: 2025-06-03
- Inventor: Chieh Lee , Chia-En Huang , Yi-Ching Liu , Wen-Chang Cheng , Yih Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: G11C11/4091
- IPC: G11C11/4091 ; G11C5/06 ; G11C7/06 ; G11C7/10 ; G11C11/4094 ; G11C11/4096 ; G11C11/4093

Abstract:
A memory device including a memory array configured to store data, a sense amplifier circuit coupled to the memory array, and a read circuit coupled to the sense amplifier circuit, wherein the read circuit includes a first input that receives a read column select signal for activating the read circuit to read the data out of the memory array through the read circuit during a read operation.
Public/Granted literature
- US20230023505A1 SENSE AMPLIFIER WITH READ CIRCUIT FOR COMPUTE-IN-MEMORY Public/Granted day:2023-01-26
Information query
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