A method includes performing a programming operation on the memory cell using incremental step pulse programming. The programming operation includes applying one or more first voltage steps to the word line using a first step value to increase a threshold voltage of the memory cell toward a programming state. The programming operation also includes determining a quantity of memory cells that have a threshold voltage between first and second verification voltages. The second verification voltage is less than the first verification voltage and outside of a range of threshold voltages corresponding to the programming state. The programming operation also includes determining a step adjustment value based on the determining of the quantity. The programming operation also includes adjusting the first step value using the step adjustment value.