Invention Grant
- Patent Title: Method of processing substrate
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Application No.: US17838304Application Date: 2022-06-13
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Publication No.: US12322598B2Publication Date: 2025-06-03
- Inventor: Hwayoung Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2021-0144972 20211027
- Main IPC: H01L21/268
- IPC: H01L21/268 ; B23K26/03 ; B23K26/53 ; B23K103/00 ; H01L21/683 ; H01L21/78

Abstract:
A method of processing a substrate includes mounting a substrate on a concave mounting surface of a mounting table and deforming a surface of the substrate into a concave shape; detecting, by a height sensor, a height of the surface of the substrate in a vertical direction; determining positions of a plurality of first focus points based on height data of the surface of the substrate, detected by the height sensor; and forming a first modification layer in the substrate by irradiating the plurality of first focus points with a laser beam.
Public/Granted literature
- US20230129020A1 METHOD OF PROCESSING SUBSTRATE Public/Granted day:2023-04-27
Information query
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