Invention Grant
- Patent Title: Wafer processing laminate, temporary adhesive material for wafer processing, and method for manufacturing thin wafer
-
Application No.: US17641733Application Date: 2020-09-17
-
Publication No.: US12322637B2Publication Date: 2025-06-03
- Inventor: Mitsuo Muto , Shohei Tagami , Michihiro Sugo
- Applicant: SHIN-ETSU CHEMICAL CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2019-178951 20190930
- International Application: PCT/JP2020/035309 WO 20200917
- International Announcement: WO2021/065547 WO 20210408
- Main IPC: H01L21/683
- IPC: H01L21/683 ; B32B7/12 ; B32B9/04 ; B32B17/06 ; B32B37/12 ; B32B37/18 ; B32B38/00 ; B32B43/00 ; C09J7/38 ; H01L21/306

Abstract:
A temporary adhesive material for wafer processing temporarily bonds a support to a wafer having a circuit-forming front and back surface for processing, including a composite temporary adhesive material layer having at least a two-layer structure of first and second temporary adhesive layers, the first layer including a thermoplastic resin layer that is releasably adhered to the wafer's front surface; and the second layer including a photo-curing siloxane polymer layer laminated on the first layer. A wafer processing laminate, a temporary adhesive material for wafer processing, and a method for manufacturing a thin wafer using the same, which suppress wafer warpage at the time of heat-bonding, have excellent delaminatability and cleaning removability, allow layer formation with uniform film thickness on a heavily stepped substrate, are highly compatible with steps of forming TSV, etc., have excellent thermal process resistance, and are capable of increasing productivity of thin wafers.
Public/Granted literature
Information query
IPC分类: