Invention Grant
- Patent Title: Semiconductor structure, method for forming same, and wafer on wafer bonding method
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Application No.: US17893218Application Date: 2022-08-23
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Publication No.: US12322654B2Publication Date: 2025-06-03
- Inventor: Yuanhao Gao
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202111268970.6 20211029
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L23/00 ; H01L23/48
Abstract:
A method for forming the semiconductor structure includes: a wafer in which a semiconductor device is formed is provided; a blind hole is formed in the wafer; a first metal material is deposited in the blind hole to form a through silicon via; and a first metal material deposited on a surface of the wafer is removed, and the surface of the wafer is planarized.
Public/Granted literature
- US20230137875A1 SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING SAME, AND WAFER ON WAFER BONDING METHOD Public/Granted day:2023-05-04
Information query
IPC分类:
