Invention Grant
- Patent Title: Guard ring structure, semiconductor structure and manufacturing method
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Application No.: US17605733Application Date: 2021-07-08
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Publication No.: US12322671B2Publication Date: 2025-06-03
- Inventor: Hua Yan , Hsin-Pin Huang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202110270706.X 20210312
- International Application: PCT/CN2021/105209 WO 20210708
- International Announcement: WO2022/188320 WO 20220915
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/304 ; H01L21/78
Abstract:
A guard ring structure includes: a bottom metal layer; a protection structure located on the bottom metal layer, wherein the protection structure includes an insertion portion, an interconnection portion, and a metal layer stacked in sequence from bottom to top, and the insertion portion is inserted into the nearest underlining metal layer under the interconnection.
Public/Granted literature
- US20240055309A1 Guard Ring Structure, Semiconductor Structure And Manufacturing Method Public/Granted day:2024-02-15
Information query
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