Invention Grant
- Patent Title: Semiconductor package having composite seed-barrier layer and method of forming the same
-
Application No.: US18482006Application Date: 2023-10-05
-
Publication No.: US12322682B2Publication Date: 2025-06-03
- Inventor: Wei-Chung Chang , Ming-Che Ho , Hung-Jui Kuo
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/285 ; H01L21/768 ; H01L23/31

Abstract:
A semiconductor package includes a substrate, a composite seed-barrier layer, a routing via, and a semiconductor die. The substrate has a through hole formed therethrough. The composite seed-barrier layer extends on sidewalls of the through hole and includes a first barrier layer, a seed layer, and a second barrier layer sequentially stacked on the sidewalls of the through hole. The routing via fills the through hole and is separated from the substrate by the composite seed-barrier layer. The semiconductor die is electrically connected to the routing via. Along the sidewalls of the through holes, at a level height corresponding to half of a total thickness of the substrate, the seed layer is present as inclusions of seed material surrounded by barrier material of the first barrier layer and the second barrier layer.
Public/Granted literature
- US20240047308A1 SEMICONDUCTOR PACKAGE HAVING COMPOSITE SEED-BARRIER LAYER AND METHOD OF FORMING THE SAME Public/Granted day:2024-02-08
Information query
IPC分类: