Invention Grant
- Patent Title: Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold
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Application No.: US18622153Application Date: 2024-03-29
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Publication No.: US12322683B2Publication Date: 2025-06-03
- Inventor: Toshio Hanada
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: HSML P.C.
- Priority: JP2012-206947 20120920,JP2012-207194 20120920
- Main IPC: H01L23/482
- IPC: H01L23/482 ; H01L21/50 ; H01L21/56 ; H01L23/00 ; H01L23/31 ; H01L23/373 ; H01L23/498 ; H01L23/538 ; H01L25/07 ; H01L25/11 ; H01L25/18 ; H02M7/00
Abstract:
The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.
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Information query
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