Invention Grant
- Patent Title: Package structure including auxiliary dielectric portion
-
Application No.: US17683375Application Date: 2022-03-01
-
Publication No.: US12322688B2Publication Date: 2025-06-03
- Inventor: Po-Han Wang , Sih-Hao Liao , Wei-Chih Chen , Hung-Chun Cho , Ting-Chen Tseng , Yu-Hsiang Hu , Hung-Jui Kuo
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H01L21/48 ; H01L23/498

Abstract:
A package structure includes a first redistribution layer, a semiconductor die and a second redistribution layer. The first redistribution layer includes a first dielectric layer, first conductive elements, second conductive elements, a top dielectric layer and an auxiliary dielectric portion. The first conductive elements and the second conductive elements are disposed on the first dielectric layer with a first pattern density and a second pattern density respectively. The top dielectric layer is disposed on the first dielectric layer and covering a top surface of the second conductive elements. The auxiliary dielectric portion is disposed in between the first dielectric layer and the top dielectric layer, and covering a top surface of the first conductive elements. The semiconductor die is disposed on the first redistribution layer. The second redistribution layer is disposed on the semiconductor die, and electrically connected to the semiconductor die and the first redistribution layer.
Public/Granted literature
- US20230282558A1 PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2023-09-07
Information query
IPC分类: