Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17828376Application Date: 2022-05-31
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Publication No.: US12322708B2Publication Date: 2025-06-03
- Inventor: Takehirou Mariko , Yasuhiro Okamoto , Senichirou Nagase
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rimon P.C.
- Priority: JP2021-118820 20210719
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/304 ; H01L21/66 ; H01L21/78 ; H01L23/544 ; H01L29/06
Abstract:
In a semiconductor device in a wafer state, an element region and a scribe region are defined in one main surface of a semiconductor substrate. In the element region, a vertical MOS transistor is formed as a semiconductor element. In the scribe region, an n-type column region and a p-type column region are defined. An n-type column resistor is formed in the n-type column region. A p-type column resistor is formed in the p-type column region.
Public/Granted literature
- US20230027022A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-01-26
Information query
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